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40 积分 2025-09-07 加入
6.5 kV SiC p‑Channel IGBT With Enhanced Injection Efficiency and Reduced On‑State Voltage
5天前
已关闭
Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters
1个月前
已完结
智能检索 Simulation on a field-stop IGBT with inversion-channel metal-oxide-semiconductor system and Si/4H–SiC hetero-junction emitter 的结果 Simulation on a field-stop IGBT with inversion-channel metal-oxide-semiconductor system and Si/4H-SiC hetero-junction emitter 1 / 101 Simulation on a field-stop IGBT with inversion-channel metal-oxide-semiconductor system and Si/4H-SiC hetero-junction emitter
1个月前
已关闭
On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well
1个月前
已完结
Fatigue Mechanism of Die-Attach Joints in IGBTs Under Low-Amplitude Temperature Swings Based on 3D Electro-Thermal-Mechanical FE Simulations
2个月前
已完结
3D Electro-Thermal Simulation of 4H-SiC Power MOSFETs with Advanced Self-Heating Models
2个月前
已关闭
4. 基于紫外氪灯模型的等离子体放电物理特性研究
4个月前
已完结
On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
5个月前
已完结
Light-triggered regionally controlled n-doping of organic semiconductors
6个月前
已完结
SiC IGBT闩锁效应的热电耦合仿真与自热模型验证
6个月前
已关闭
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