Lv4
520 积分 2025-03-10 加入
Wet etch clean-up of plasma damage for 1.68 kV breakdown in NiO/β-Ga2O3 chlorine-etched PN diode
2个月前
已关闭
Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing
2个月前
已完结
Enhanced β-Ga2O3 Schottky diode interface characteristics via low-temperature supercritical fluid technology Featured
3个月前
已关闭
The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot
3个月前
已完结
Study on Single Event Upset and Mitigation Technique in JLTFET‐Based 6T SRAM Cell
3个月前
已完结
Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review
3个月前
已完结
Ohmic contact formation on n-type β-Ga2O3: Comparative analysis of Ti/Au and ITO/Ti/Au metallization schemes
4个月前
已关闭
In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
5个月前
已完结
Models for contacts to planar devices
5个月前
已完结
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