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210 积分 2023-12-06 加入
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures
3小时前
已完结
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
17天前
已完结
Study on the GaN/AlGaN Piezotronic Effect Applied in Pressure Sensors
24天前
已完结
Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study
25天前
已完结
Piezotronic Effect in Polarity-Controlled GaN Nanowires
25天前
已完结
New variational solution for the lowest subband level of the two-dimensional electron gas
1个月前
已完结
Fabrication and formation mechanisms of ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs
1个月前
已完结
Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions
1个月前
已完结
Electronic properties of two-dimensional systems
1个月前
已完结
Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review
1个月前
已完结
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