| 标题 |
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Reliability 作者:Zhaoyang Peng; Yiyu Wang; Huajun Shen; Chengzhan Li; Jia Wu; et al 出版日期:2016-03-01 |
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(2025-6-4)