Lv619
2340 积分 2020-03-30 加入
The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective
5天前
已完结
Negative Gate Bias Induced Vth instability in SiC MOSFET: Role of Body Diode Conduction
11天前
已完结
1500 V GaN-on-Si Vertical Power MOSFETs: from quasi-vertical to fully-vertical topology
20天前
已完结
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
21天前
已完结
Negative Gate Bias Induced Vth Instability in SiC MOSFET: Role of Body Diode Conduction
27天前
已完结
Negative Gate Bias Induced Vth instability in SiC MOSFET: Role of Body Diode Conduction
27天前
已完结
Si IGBT and SiC MOSFET - Potentials and Limitations of Plasma Shaping versus Unipolar Switching in Medium Power Applications
27天前
已完结
IGBT: The GE Story
28天前
已完结
Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance
1个月前
已完结
The Latest Fabrication and Experimental Results of 1.2 kV Split-Gate 4H-SiC MOSFET with P+ Buffer
1个月前
已完结
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