Lv5
1100 积分 2020-03-30 加入
NexFET Generation 2, New Way to Power
12天前
已完结
Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout
25天前
已完结
Comparison of Two Cell Topologies for 1.2kV 4H-SiC MOSFETs with Different JFET Width
25天前
已完结
Comparative Analysis of the Static Performance of Various HEXFET Layout Approaches for 1.2 kV SiC MOSFETs
25天前
已完结
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies
25天前
已完结
High-density low onresistance trench MOSFETs employing oxide spacers and self-align technique for DC-DC converter applications
26天前
已完结
High-density trench DMOSFETs employing two step trench tcchniques and trench contact structure
26天前
已完结
Demonstration of 3.5kV SiC Deep-Implanted Superjunction Didoes
27天前
已完结
Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process
1个月前
已完结
A Fully Self-Aligned SiC Trench MOSFET with 0.5 μm Channel Pitch
1个月前
已完结
皖公网安备34019202002308
