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1430 积分 2020-03-30 加入
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs
8天前
已完结
Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design
9天前
已完结
NexFET Generation 2, New Way to Power
1个月前
已完结
Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout
2个月前
已完结
Comparison of Two Cell Topologies for 1.2kV 4H-SiC MOSFETs with Different JFET Width
2个月前
已完结
Comparative Analysis of the Static Performance of Various HEXFET Layout Approaches for 1.2 kV SiC MOSFETs
2个月前
已完结
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies
2个月前
已完结
High-density low onresistance trench MOSFETs employing oxide spacers and self-align technique for DC-DC converter applications
2个月前
已完结
High-density trench DMOSFETs employing two step trench tcchniques and trench contact structure
2个月前
已完结
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