材料科学
绝缘体(电)
并五苯
薄膜晶体管
光电子学
双层(生物学)
电容
泄漏(经济)
阈值电压
晶体管
图层(电子)
电压
纳米技术
电极
电气工程
化学
经济
物理化学
宏观经济学
工程类
作者
Yihua Zhao,Guifang Dong,Liduo Wang,Yong Qiu
标识
DOI:10.1088/0256-307x/24/6/064
摘要
We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancement of the field-effect mobility from 0.21 to 0.54 cm2/Vs, and the decreasing threshold voltage from 4.38 V to -2.5 V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
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