| 标题 |
Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance ( |
| 网址 | |
| DOI | |
| 其它 |
期刊:Crystals 作者:Swarnav Mukhopadhyay; Cheng Liu; Jiahao Chen; Md Tahmidul Alam; Surjava Sanyal; et al 出版日期:2023-10-02 |
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(2025-6-4)