| 标题 |
 Suppression of charges within an Al 2 O 3 high- κ dielectric and reduction of interface traps at the cryogenic temperature of a Ge n-MOS capacitor fabricated by plasma postoxidation and forming gas annealing |
| 网址 | |
| DOI | |
| 其它 |
期刊：Semiconductor Science and Technology 作者：Yunfei Liu; Dechen Wang; Luhang Song; Jiankun Li; Tian Pei; et al 出版日期：2025-09-10 |
| 求助人 | |
| 下载 |
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(2025-6-4)
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