Lv3
268 积分 2025-10-10 加入
Observation of the single-electron regime in a highly tunable silicon quantum dot
20小时前
已完结
Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2
20小时前
已完结
Local Dielectric Property of Hafnium and Lanthanum Atoms in HfLaOx
20小时前
已完结
A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications
20小时前
已完结
High dielectric constant gate oxides for metal oxide Si transistors
20小时前
已完结
Inflection Phenomenon in Cryogenic MOSFET Behavior
20小时前
已完结
Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs*
20小时前
已完结
Brief review of the MOS device physics for low temperature electronics
20小时前
已完结
Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs
21小时前
待确认
First-principles investigation of microscopic mechanisms underlying hole mobilities in diamond, silicon, and germanium
21小时前
已完结
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