Lv4
484 积分 2025-10-10 加入
Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere
12天前
已完结
ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
14天前
已完结
Digitally Controlled Leakage-Based Oscillator and Fast Relocking MDLL for Ultra Low Power Sensor Platform
14天前
已完结
Ab initio study of Al–Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks
15天前
已完结
Extending the AVO toolbox with rock physics driven inversion for seismic interpretation with little or no well control: Example from the Norwegian Sea
29天前
已完结
Suppression of charges within an Al 2 O 3 high- κ dielectric and reduction of interface traps at the cryogenic temperature of a Ge n-MOS capacitor fabricated by plasma postoxidation and forming gas annealing
1个月前
已关闭
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device
1个月前
已完结
Cryogenic Mobility Enhancement in Si MOS Devices via SiO2 Regrowth
4个月前
已完结
Formation and elimination mechanism of thermal blistering in Al2O3/Si system
4个月前
已完结
Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor
4个月前
已关闭
皖公网安备34019202002308
