| 标题 |
Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction |
| 网址 | |
| DOI | |
| 其它 |
期刊:ACS Applied Materials & Interfaces 作者:PhaniKiran Vabbina; Nitin Choudhary; Al-Amin. Chowdhury; Raju Sinha; Mustafa Karabiyik; et al 出版日期:2015-07-07 |
| 求助人 | |
| 下载 | 该求助完结已超 24 小时,文件已从服务器自动删除,无法下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)