| 标题 |
Investigation of Saturated Drain Current Change Phases For PMOS HCI Stressed at Ibmax |
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| DOI | |
| 其它 |
期刊:International Symposium on the Physical and Failure Analysis of Integrated Circuits 作者:Wei-Cheng Chu; B. Tsai; Yi-Heng Chen; Kun-Ham Hsieh 出版日期:2020-07-20 |
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(2025-6-4)