| 标题 |
Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Bosul Kim; Eugene Chong; Do Hyung Kim; Yong Woo Jeon; Dae Hwan Kim; Sang Yeol Lee 出版日期:2011-08-11 |
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(2025-6-4)