| 标题 |
Monolithic Integration of Light-emitting Diodes and Power Metal-oxide-semiconductor Channel High-electron-mobility Transistors for Light-emitting Power Integrated Circuits in GaN on Sapphire Substrate
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| 其它 | Li, Z., et al., Monolithic Integration of Light-emitting Diodes and Power Metal-oxide-semiconductor Channel High-electron-mobility Transistors for Light-emitting Power Integrated Circuits in GaN on Sapphire Substrate. Applied Physics Letters, 2013. 102(19): p. 735. |
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