| 标题 |
Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon |
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| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:N. Cherkashin; N. Daghbouj; G. Seine; A. Claverie 出版日期:2018-01-03 |
| 求助人 | |
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(2025-6-4)