| 标题 |
Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Chang-Yu Shen; M.-F. Li; Hong-Yu Yu; X.-P. Wang; Y. Yeo; et al 出版日期:2005-02-25 |
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(2025-6-4)