| 标题 |
Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Materials Chemistry C 作者:Teng-Han Huang; Po-Kang Yang; Wen-Yuan Chang; Jui-Fen Chien; Chen-Fang Kang; et al 出版日期:2013-10-01 |
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(2025-6-4)