| 标题 |
Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor |
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| DOI | |
| 其它 |
期刊:Journal of the American Chemical Society 作者:K. Matsuzaki; N. Tsunoda; Y. Kumagai; Ya-Lun Tang; K. Nomura; et al 出版日期:2022-09-01 |
| 求助人 | |
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(2025-6-4)