| 标题 |
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy |
| 网址 | |
| DOI | |
| 其它 |
期刊:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 作者:Zongzhen Li; Tianqi Liu; Jinshun Bi; Huijun Yao; Zhenxing Zhang; et al 出版日期:2019 |
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(2025-6-4)