| 标题 |
Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer |
| 网址 | |
| DOI | |
| 其它 |
期刊:Superlattices and Microstructures 作者:Mei Cui; Yuanbin Gao; Sheng Hang; Xuejiao Qiu; Yonghui Zhang; et al 出版日期:2020-07-22 |
| 求助人 | |
| 下载 | 该求助完结已超 24 小时,文件已从服务器自动删除,无法下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)