| 标题 |
Formation of Graphene–Silicon Junction by Room Temperature Reduction With Simultaneous Defects Removal |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Haokun Yi; Jun Zhao; Yuyan Huang; Guodong Zhu; Yongfeng Mei; et al 出版日期:2020-12-29 |
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(2025-6-4)