| 标题 |
SCR Device Fabricated With Dummy-Gate Structure to Improve Turn-On Speed for Effective ESD Protection in CMOS Technology |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Semiconductor Manufacturing 作者:M.-D. Ker; K.-C. Hsu 出版日期:2005-05-11 |
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(2025-6-4)