| 标题 |
Characteristics of crystal defects due to the inverse piezoelectric effect in aluminum gallium nitride / gallium nitride high electron mobility transistors |
| 网址 | |
| DOI |
10.25046/aj100302
doi
|
| 其它 |
期刊:Advances in Science, Technology and Engineering Systems Journal 作者:Junya Takeda; Soichi Sano; Hirohisa Taguchi 出版日期:2025-05-01 |
| 求助人 | |
| 下载 | 该求助完结已超 24 小时,文件已从服务器自动删除,无法下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)