| 标题 |
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography |
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| DOI | |
| 其它 |
期刊:Applied Physics Express 作者:Sayleap Sdoeung; Kohei Sasaki; Akito Kuramata; Makoto Kasu 出版日期:2022-10-03 |
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(2025-6-4)