Lv7
4990 积分 2024-02-21 加入
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
1天前
已完结
Thermodynamic and experimental study of β -Ga 2 O 3 growth by oxide vapor-phase epitaxy using Ga 2 O and H 2 O as precursors
1天前
已关闭
Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy
1天前
已完结
Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga2O3 wafers prepared on miscut angle substrates
1天前
已完结
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
1天前
已完结
Thermally stable X-ray detector using β-Ga₂O₃ schottky barrier diodes in extreme environments
2个月前
已关闭
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
2个月前
已完结
Influence of dislocation clusters on homoepitaxial layers grown by halide vapor phase epitaxy (001) β-Ga2O3 investigated by synchrotron x-ray topography and scanning transmission electron microscopy
2个月前
已关闭
Crystal structure analysis of stacking faults through scanning transmission electron microscopy of β-Ga2O3 (001) layer grown via halide vapor phase epitaxy
3个月前
已完结
High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant
3个月前
已完结
皖公网安备34019202002308
