| 标题 |
Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI |
| 网址 | |
| DOI |
10.7567/ssdm.2004.c-8-2
doi
|
| 其它 |
期刊:The Japan Society of Applied Physics 作者:T. Sadoh; Ryo Matsuura; M. Ninomiya; M. Nakamae; T. Enokida; et al 出版日期:2004-09-15 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)