| 标题 |
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V) |
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| 其它 |
期刊:2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 作者:Yan-Kui Liang; June-Yang Zheng; Yu-Lon Lin; Wei-Li Li; Yu-Cheng Lu; et al 出版日期:2023-07-25 |
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(2025-6-4)