Lv2
170 积分 2025-12-18 加入
Dual-gate Hf-doped InZnO field-effect transistors with sub-0.1 V threshold voltage shift under bias stress
4个月前
已完结
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)
5个月前
已完结
P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors
5个月前
已完结
Dual-gate Hf-doped InZnO field-effect transistors with sub-0.1 V threshold voltage shift under bias stress
5个月前
已关闭
Improvement in electrical instability of atomic layer-deposited IGZO transistors through high-temperature annealing
5个月前
已关闭
Back-End-Of-Line Compatible Indium Oxide Thin-Film Transistor Enabling Cryogenic Operation Down to 2 Kelvin
7个月前
已关闭
Persistent photoconductivity in a-IGZO thin films induced by trapped electrons and metastable donors
7个月前
已完结
Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3
7个月前
已完结
Atomic layer deposition mechanism of hafnium dioxide using hafnium precursor with amino ligands and water
7个月前
已完结
Atomic layer deposition
7个月前
已完结
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