| 标题 |
Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance |
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| DOI | |
| 其它 |
期刊:IEEE Electron Device Letters 作者:Junjie Yang; Jin Wei; Maojun Wang; Jingjing Yu; Yanlin Wu; et al 出版日期:2024-04-18 |
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(2025-6-4)