Lv11
34 积分 2022-02-23 加入
Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing
1小时前
待确认
Bipolar conductivity AlN with ultra-low contact resistance
1天前
已完结
Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
1个月前
已完结
Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance
1个月前
已完结
Dual- Vs. Single-Peak Transconductance Evolution in Schottky $p$-Gan Gate Hemts: Influence of Partially and Fully Depleted $p$-Gan Layer
1个月前
已完结
Balancing Threshold Voltage and On-Resistance of p-GaN Gate HEMTs via Mg Doping Engineering
1个月前
已完结
High-mobility holes in gallium nitride and their quantum oscillations
1个月前
已完结
In situ dry repair and passivation unlocks size-independent performance in Ⅲ-nitride micro-LEDs
1个月前
已完结
Velocity-field measurements in a GaN/AlN two-dimensional hole gas
9个月前
已完结
A majority-carrier camel diode
10个月前
已关闭
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