| 标题 |
A Back-Illuminated 10 μm-Pitch SPAD Depth Sensor with 42.5% PDE at 940 nm using an Optimized Doping Design 采用优化的掺杂设计的背照式10 μ m间距SPAD深度传感器,在940纳米处具有42.5% PDL
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期刊:2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 作者:S. Shimada; Y. Otake; J. Suzuki; A. Magori; K. Kurata; et al 出版日期:2025 |
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(2025-6-4)