| 标题 |
专利、报告等 Mitigation of substrate miscut angle contradiction for monolithic SiC/GaN integration via optimized AlGaN/GaN HEMT epitaxy on 4H-SiC substrates |
| 网址 | |
| DOI |
10.2139/ssrn.7084228
doi
|
| 其它 |
期刊: 作者:Jiajie Pan; Hao Ying; Baohua Tan; Yiyuan Sun; Hao Dong; et al 出版日期:2026-07-09 |
| 求助人 | |
| 下载 | 暂无链接,等待应助者上传 |
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(2025-6-4)