| 标题 |
A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM |
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| DOI | |
| 其它 |
期刊:International Electron Devices Meeting 作者:Wei-Chen Chen; H. Lue; Ming-Hung Wu; Xi-Wei Lin; Ko-Hsin Lee; et al 出版日期:2024-12-07 |
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(2025-6-4)