| 标题 |
Low Power HfZrO 2 FeRAMs With In-Situ CF 4 Plasma Treatment at TiN Bottom Electrode Featuring Superior Endurance and Robust Retention for Embedded NVMs |
| 网址 | |
| DOI |
10.1109/vlsitsa69131.2026.11527839
doi
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| 其它 |
期刊:2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) 作者:Dong-Ru Hsieh; Yi-Hsiu Chen; Yi-Sin Rao; Li-Quan Yang; Chia-Chen Wan; et al 出版日期:2026-04-13 |
| 求助人 | |
| 下载 | 该求助完结已超 24 小时,文件已从服务器自动删除,无法下载。 |
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(2025-6-4)