| 标题 |
Analysis of Single Event Response and Hardening Methods in 1.2 kV SiC Power MOSFET With Multicell and Termination Structure |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Jiang Lu; Wenjun Song; Tao Liu; Jun Tang; Zhao We; et al 出版日期:2023-10-09 |
| 求助人 | |
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(2025-6-4)