| 标题 |
Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Dat Q. Tran; Rohith Soman; Jeong-Kyu Kim; Mohamadali Malakoutian; Srabanti Chowdhury 出版日期:2026-03-17 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)