| 标题 |
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse |
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| DOI | |
| 其它 |
期刊:Journal of Alloys and Compounds 作者:Muhammad Ismail; Chandreswar Mahata; Sungjun Kim 出版日期:2021-09-29 |
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(2025-6-4)