| 标题 |
Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (0001) Si-face and (0001¯) C-face by using a new Si-O-C interatomic potential |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:So Takamoto; Takahiro Yamasaki; Takahisa Ohno; Chioko Kaneta; Asuka Hatano; et al 出版日期:2018-05-10 |
| 求助人 | |
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(2025-6-4)