| 标题 |
Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT) |
| 网址 | |
| DOI | |
| 其它 |
期刊:Electronics 作者:Yeon-Seok Kim; Chang-Young Lim; Min-Woo Kwon 出版日期:2024-02-07 |
| 求助人 | |
| 下载 |
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(2025-6-4)