| 标题 |
Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory |
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| DOI | |
| 其它 |
期刊:Journal of Alloys and Compounds 作者:Tsung-Ming Tsai; Chun-Chu Lin; Wen-Chung Chen; Cheng-Hsien Wu; Chih-Cheng Yang; et al 出版日期:2020-06-01 |
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(2025-6-4)