| 标题 |
Over 1.3-kV β-Ga₂O₃ Vertical UMOSFET With High Concentration of N-Ion Implantation and Activation Annealing Temperature |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Zhili Zou; Xiaodong Zhang; Chunhong Zeng; Tiwei Chen; Gaofu Guo; et al 出版日期:2025-03-19 |
| 求助人 | |
| 下载 |