| 标题 |
Effects of a step-graded AlxGa1−xN electron blocking layer in InGaN-based laser diodes |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Yun Zhang; Tsung‐Ting Kao; Jianping Liu; Zachary Lochner; Seong-Soo Kim; et al 出版日期:2011-04-15 |
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(2025-6-4)