| 标题 |
Effect of Si segregation at grain boundaries on the mechanical behaviours of ageing Al metallization layer in insulated gate bipolar transistor module |
| 网址 | |
| DOI | |
| 其它 |
期刊:Molecular Simulation 作者:Tong An; Xiaoxuan Chen; Qi Wang; Jing Han; F. Qin; et al 出版日期:2023-06-24 |
| 求助人 | |
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(2025-6-4)