| 标题 |
[高分]
Study on the growth of 4H-SiC single crystal with high purity SiC fine powder |
| 网址 | |
| DOI |
10.6111/jkcgct.2019.29.6.383
doi
|
| 其它 |
期刊:Journal of the Korean Crystal Growth and Crystal Technology 作者:Dong‐Geun Shin; 김병숙; 손해록; 김무성 出版日期:2019-12-01 |
| 求助人 | |
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(2025-6-4)