| 标题 |
First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics |
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| 其它 |
期刊:Materials Science in Semiconductor Processing 作者:Anoop Kumar Singh; Chao-Chun Yen; Chiung‐Yi Huang; Fu‐Gow Tarntair; Hsin-Yu Chou; et al 出版日期:2024-04-30 |
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(2025-6-4)