| 标题 |
Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Agniva Paul; Gautham Kumar; Apu Das; G. Larrieu; Sourav De 出版日期:2025-07-07 |
| 求助人 | |
| 下载 |
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(2025-6-4)