| 标题 |
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures |
| 网址 | |
| DOI | |
| 其它 |
期刊:Nature electronics 作者:Yosuke Sasama; Taisuke Kageura; Masataka Imura; Kenji Watanabe; Takashi Taniguchi; et al 出版日期:2021-12-23 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)