| 标题 |
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates |
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| DOI | |
| 其它 |
期刊:Thin Solid Films 作者:V. Terzieva; L. Souriau; M. Caymax; D. Brunco; A. Moussa; et al 出版日期:2008-11-03 |
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(2025-6-4)