| 标题 |
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs |
| 网址 | |
| DOI | |
| 其它 |
期刊:2022 International Electron Devices Meeting (IEDM) 作者:S. Abhinay; W.-M. Wu; C.-A. Shih; S.-H. Chen; A. Sibaja-Hernandez; et al 出版日期:2022-12-03 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)