| 标题 |
Achieving 0.82-dB NFmin in High-Drain-Bias GaN HEMTs via Buffer and Field-Plate Engineering for High-Linearity LNA Applications |
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| DOI | |
| 其它 |
期刊:IEEE Electron Device Letters 作者:Wen-Bo Ye; Zi-Yang Wang; Hao-Wei Zhang; Hao-Lan Qu; Xin-Bo Zou 出版日期:2026-10-01 |
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(2025-6-4)