| 标题 |
 Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO2–x Gate Insulator and a Zinc Oxide Channel Layer |
| 网址 | |
| DOI | |
| 其它 |
期刊：ACS Applied Materials & Interfaces 作者：Jimin Han; Taeyun Noh; Boyoung Jeong; Peter Hayoung Chung; Garam Park; et al 出版日期：2025-06-15 |
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(2025-6-4)
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